| abstract |
A method of manufacturing a silicon carbide epitaxial substrate includes: performing degassing by heating a reaction chamber of a film formation apparatus; and using a gas including silicon atoms, a gas including carbon atoms, an ammonia gas, and a hydrogen gas serving as a carrier gas and having a dew point equal to or less than −100° C., epitaxially growing a silicon carbide layer on a surface of a silicon carbide single-crystal substrate within the reaction chamber. |