| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f80f7502fa29eccce5d0ca3b654f4d96 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate |
2018-10-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_468bacae59cd84c5ffa1d160e951ca60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b890ec813c5aeb3c141c8fdf062c2220
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fafb29a1ae6794fdc4ad45a66e7ab57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31bcec4607a92f56e621cc03a8a1ef8d |
| publicationDate |
2019-05-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019157287-A1 |
| titleOfInvention |
Three-dimensional memory structure and manufacturing method thereof |
| abstract |
A three-dimensional (3D) memory structure and a manufacturing method thereof are provided. The method includes the following steps. A 3D memory unit is formed on a first region of a substrate. A first insulation layer is formed on the first region and a second region of the substrate. A first planarization process is performed to the first insulation layer. The top surface of the first insulation layer on the first region and the top surface of the first insulation layer on the second region are coplanar after the first planarization process. A peripheral circuit is formed on the second region after the first planarization process. The influence of the process for forming the 3D memory unit on the peripheral circuit may be avoided. The manufacturing yield, the electrical performance, and the reliability of the 3D memory structure may be enhanced accordingly. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022102247-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437382-B2 |
| priorityDate |
2017-11-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |