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filingDate 2019-03-04^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-06-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2019198651-A1
titleOfInvention High-electron-mobility transistor devices
abstract A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and to the drain. The second HEMT has a lower threshold voltage than the first HEMT.
priorityDate 2016-12-02^^<http://www.w3.org/2001/XMLSchema#date>
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