http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020048496-A1

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filingDate 2019-08-06^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbc4e85e963216bd77e51338e2842080
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publicationDate 2020-02-13^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020048496-A1
titleOfInvention Oxide Chemical Mechanical Planarization (CMP) Polishing Compositions
abstract The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
priorityDate 2018-08-09^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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