| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2018-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc23c0b0b0efdf9c9a732425fc22c2bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461ad7ffa039b59e0a0db8439512590b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6516ff4731606efdd4e628b6a3412c7 |
| publicationDate |
2020-04-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020105905-A1 |
| titleOfInvention |
Methods, apparatus, and manufacturing system for finfet devices with reduced parasitic capacitance |
| abstract |
A method, apparatus, and manufacturing system are disclosed for a fin field effect transistor having a reduced parasitic capacitance between a gate and a source/drain contact. In one embodiment, we disclose a semiconductor device including first and second fins; an isolation structure between the fins; first and second metal gates; a first dielectric body under the first metal gate and on the substrate between the first fin and the second fin, wherein a top of the first dielectric body is below a top of the first metal gate; and a second dielectric body in the second metal gate and on the substrate between the first fin and the second fin, wherein a top of the second dielectric body is at or above a top of the second metal gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I742828-B |
| priorityDate |
2018-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |