| abstract |
A gate connection layer ( 14 ) includes a portion placed on an outer trench (TO) with a gate insulating film ( 7 ) being interposed. A first main electrode ( 10 ) includes a main contact (CS) electrically connected to a well region ( 4 ) and a first impurity region ( 5 ) within an active region ( 30 ), and an outer contact (CO) being spaced away from the active region ( 30 ) and in contact with a bottom face of the outer trench (TO). A trench-bottom field relaxing region ( 13 ) is provided in a drift layer ( 3 ). A trench-bottom high-concentration region ( 18 ) has an impurity concentration higher than that of the trench-bottom field relaxing region ( 13 ), is provided on the trench-bottom field relaxing region ( 13 ), and extends from a position where it faces the gate connection layer ( 14 ) with the gate insulating film ( 7 ) being interposed, to a position where it is in contact with the outer contact (CO) of the first main electrode ( 10 ). |