| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-0411
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-0409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-1068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-1048 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F11-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-52 |
| filingDate |
2018-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae12effc4578268abfa1050294702b71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c7275221811f3ae89f7e5c6fd6f806c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48246a9baee928e53261bbdb2061ef8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f323e46ab944afa7d643ba5ddb07a958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f44c10209c1e21aa4eb1a95ee429b818 |
| publicationDate |
2020-05-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020143880-A1 |
| titleOfInvention |
Dedicated read voltages for data structures |
| abstract |
In an example, a first data structure can be read with a first read voltage dedicated to the first data structure. A second data structure that stores a larger quantity of data than the first data structure can be with a second read voltage that is dedicated to the second data structure. The first data structure can be with a third read voltage in response to a quantity of errors in reading the first data structure being greater than or equal to a first threshold quantity. The second data structure can be read with the third read voltage in response to a quantity of errors in reading the second data structure being greater than or equal to a second threshold quantity. The read voltages can be based on a temperature of an apparatus that includes the first and second data structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023043091-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721381-B2 |
| priorityDate |
2018-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |