| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32260d8b93ef37639f57fb1f65e8a5fa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G17-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-04 |
| filingDate |
2018-05-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b131722c50a1c5962cc64c0734e1db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d62029d2af10210cb54da39e5e157b09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f17352c8fd10d84bbd29c82024199b2 |
| publicationDate |
2020-06-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020180966-A1 |
| titleOfInvention |
Triphenylgermylsilane and trichlorosilyl-trichlorogermane for the production of germanium-silicon layers, and method for the production thereof from trichlorosilyl-triphenylgermane |
| abstract |
Triphenylgermylsilane (Ph 3 Ge—SiH 3 ) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH 3 ). Further, a method describes the production of triphenylgermylsilane (Ph 3 Ge—SiH 3 ) by reducing trichlorosilyltriphenylgermane (Ph 3 Ge—SiCl 3 ) with a hydride in solution, and another method describes the production of trichlorosilyltrichlorogermane (C 3 Ge—SiCl 3 ) by reacting trichlorosilyltriphenylgermane (Ph 3 Ge—SiCl 3 ) with hydrogen chloride (HCl) in the presence of AlCl 3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si). |
| priorityDate |
2017-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |