http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021123136-A1

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publicationDate 2021-04-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021123136-A1
titleOfInvention Methods To Grow Low Resistivity Metal Containing Films
abstract The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
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