| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565 |
| filingDate |
2019-12-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2bf22768a611cb522d2cfae212f718a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ececf81d3b70df232dbcd8341063ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4f805732de5a369c7b4c1deb39d7d9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6278db5139bef1b706556941f2a4f43d |
| publicationDate |
2021-06-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021175246-A1 |
| titleOfInvention |
Semiconductor Pillars Having Triangular-Shaped Lateral Peripheries, and Integrated Assemblies |
| abstract |
Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices. |
| priorityDate |
2019-12-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |