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filingDate 2021-05-11^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-08-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021260863-A1
titleOfInvention Direct Additive Synthesis of Diamond Semiconductor
abstract In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.
priorityDate 2018-05-10^^<http://www.w3.org/2001/XMLSchema#date>
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