| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-864 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-93 |
| filingDate |
1973-06-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1974-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a991af111438355ee0ea1686da8a8ee4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16779e034075297a03ee64c3e625050b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ea228d7ac87265ec4830ef0f807f600
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af056b9f601ed977e59555ce4c3dd94c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaa277339b8957722b4814b36d39f16c |
| publicationDate |
1974-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3814997-A |
| titleOfInvention |
Semiconductor device suitable for impatt diodes or varactor diodes |
| abstract |
A semiconductor device suitable for IMPATT diodes or varactor diodes which are used in the microwave of millimeter wave band in which an n type GaAs body whose impurity concentration is about 8 X 1016 cm 3 having a small cross-sectional area surrounded by an intrinsic or n type GaAs layer is disposed on an n type GaAs substrate region. A p type region having a lateral extension far greater than that of the n type GaAs body is disposed over the n type GaAs body to form a small entirely flat area p-n junction therebetween. Ohmic electrodes are disposed on the p type region and the n type GaAs substrate. This structure provides a high breakdown voltage, a low junction resistance and a small junction capacitance, and facilitates the leading out of the electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4532003-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4153904-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3986192-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4252581-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4083062-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4064620-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4001858-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4590664-A |
| priorityDate |
1971-06-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |