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filingDate 1972-08-04^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1974-09-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3834939-A
titleOfInvention Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
abstract METHODS OF FORMING IMPURITY DOPED SILICON OXIDE LAYERS ON SEMICONDUCTOR SUBSTRATES BY FIRST FORMING A PAINT-ON COMPOSITION COMPRISING A SILOXANE AND A SOLUBLE IMPURITY COMPOUND, SUCH AS ALKOXIDES CONTAINING THE SUITABLE IMPURITIES SUCH AS B, P, AS AND SB. A SUBSTRATE COATED WITH THE PAINT-ON COMPOSITION IS HEAT-TREATED IN AN OXIDATIVE ATMOSPHERE IN ORDER TO CHANGE THE COATING TO A LAYER CONTAINING SILICON DIOXIDE DOPED WITH AN OXIDE OF ONE OR MORE OF THE IMPURITY ELEMENTS. A REACTIVE SILOXANE POLYMER OF A PARTICULAR STRUCTURE MAY BE ADDED TO THE PAINT-ON COMPOSITION TO IMPROVE ITS PERTINENT CHARACTERISTICS. THE IMPURITY OXIDE CONTAINED IN THE SILICON DIOXIDE SERVED AS A CONCENTRATED DEPANT SOURCE FOR DIFFUSION. THUS, IN THE INTERFACE LAYER BETWEEN SILICON AND THE MIXTURE OF THE IMPURITY OXIDE AND SILICON OXIDE THE SILICON REACTS WITH THE RESPECTIVE OXIDE TO FORM ELEMENTAL IMPURITIES AND SIO2. UNDER SILOXANES WE UNDERSTAND A CLASS OF COMPOUNDS DISTINGUISHED BY COVALENT LINKAGE OF SILICON-OXYGEN-SILICON WITH THE OTHER ELECTROVALENCE REQUIREMENTS SATISFIED BY ORGANIC AND/OR INORGANIC SUBSTITUENTS. THE TERM POLYSILOXANES REFERS TO MULTIPLE UNITS OF THE BASIC SILOXANE UNIT WHICH COMBINE TO FORM A BACKBONE STRUCTURE OF MOLECULES HAVING VARIOUS MOLECULAR WEIGHTS.
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