| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
1974-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1975-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce4651e5d23697ddbad6cc27e2e18589 |
| publicationDate |
1975-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3892608-A |
| titleOfInvention |
Method for filling grooves and moats used on semiconductor devices |
| abstract |
A process is disclosed for filling grooves, moats, and channels formed by both channel and anisotropic etching techniques. Basically the process is a two-step process to be performed on a wafer in which a channel and/or a moat has been formed. A P+ (boron) doped oxide is placed in the grooves or moats using spinon techniques followed by a uniform deposition of polycrystalline silicon over the entire wafer. Due to the spinning effects the P+ doped oxide is collected mostly in the grooves or moats. The P+ doped oxide that remains outside of the grooves and/or moats is removed using standard photolithographic procedures. The wafer is now heated to a temperature sufficient to drive the boron impurities from the P+ doped oxide into the polycrystalline silicon. A portion of a polycrystalline silicon now becomes heavily P+ doped. The remaining polycrystalline silicon remains undoped. The wafer is then etched by an etchant which effectively stops when the material being etched is highly P+ doped. In this manner a portion of the remaining undoped polycrystalline material is removed and the highly doped polycrystalline material is left in the channels and/or moats. The above can be repeated until the moats or channels are completely filled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4222792-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4631802-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0166207-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4295924-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5527872-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4351856-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0474258-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3969168-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4735822-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3998673-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107507773-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107507773-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4229474-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4507849-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3129558-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4493740-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5853478-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5733369-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4073054-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5472488-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5665845-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022102294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5005067-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0166207-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4554728-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5811345-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5021842-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4274909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4048649-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4032373-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4088516-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4670769-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5094972-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5846320-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4502894-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4233091-A |
| priorityDate |
1974-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |