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publicationDate 1977-03-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4015284-A
titleOfInvention Semiconductor photoelectron emission device
abstract Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
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