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filingDate 1976-05-10^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1977-09-06^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1977-09-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4046606-A
titleOfInvention Simultaneous location of areas having different conductivities
abstract The process employs both silicon dioxide and silicon nitride layers used for selectively masking areas to be etched in order to allow a single photomask to be used for defining areas having different conductivities simultaneously, thereby eliminating problems caused by misregistry between photomasks.
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