| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42206fe75eab96a992861f84398e420e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-102 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate |
1977-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1979-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1bfddd7f9f7285691acf0f246fd40d6 |
| publicationDate |
1979-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4137122-A |
| titleOfInvention |
Method of manufacturing a semiconductor device |
| abstract |
The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4575462-A |
| priorityDate |
1976-05-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |