Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd8dff0cc6d024e095d5decaf9202f49 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
filingDate |
1978-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1980-12-23^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_634741e55d9e3588ed433693551c1999 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_694b449c22f602862e37da6c85418ed9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03866883625c1bf82c905b8c0f2f4c12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d60e4bd852b0fe1de91697cfb35a080e |
publicationDate |
1980-12-23^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-4240195-A |
titleOfInvention |
Dynamic random access memory |
abstract |
A memory in which each cell comprises an MOS transistor merged with a storage capacitor and in which the cells are arranged to permit adjacent pairs of transistors in a common column to share a common source and the transistors in a common row to share a common gate electrode conductor. The memory uses a first polycrystalline silicon layer which is patterned to provide interconnected storage electrodes and a second polycrystalline silicon layer which is patterned to provide a plurality of stripes to serve as the bit sense lines and a plurality of gate electrodes. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4371890-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5150179-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4639274-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4651186-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4388121-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4419682-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4871688-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4641165-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4441246-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4462040-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5793068-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4651183-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4458406-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4713357-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4482908-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6312994-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293362-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4883543-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4524377-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928119-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4745080-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6833591-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004026787-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4551741-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5284785-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6642114-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4391032-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014175659-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4536941-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4313253-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5063171-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4334236-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5100823-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4335505-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5109258-A |
priorityDate |
1978-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |