http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4326210-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1124
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112
filingDate 1980-05-12^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1982-04-20^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5e0b4c3d305ad0d25048ff133a50870
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_194cd3793316b77052e50bde0239393d
publicationDate 1982-04-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4326210-A
titleOfInvention Light-responsive field effect mode semiconductor devices
abstract A field effect semiconductor device comprises a P-N junction with a depletion layer responsive to radiant energy for controllably enabling the field effect semiconductor device. The depletion layer occurs near at least a pair of gate locations within a silicon substrate. The gate locations are of P-type while the silicon substrate is of N-type. The depletion layer is rendered ineffective by photoelectromotive force derived from the radiant energy. A channel emerges according to the shrinkage of the depletion layer to thereby provide electrical connection between a source and drain electrodes of the field effect transistor.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4450464-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4878120-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/NL-8304254-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0117874-A4
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5142346-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4396833-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5459333-A
priorityDate 1977-09-26^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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