patent/US-4357203-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4357203-A

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2051317369a779747701bc0ebe411a4
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
filingDate	1981-12-30^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	1982-11-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08b2b033f11541778c50043e7a7c7109
publicationDate	1982-11-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-4357203-A
titleOfInvention	Plasma etching of polyimide
abstract	An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma etching utilizing a mixture of argon and hydrogen.
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priorityDate	1981-12-30^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6393 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129327014

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