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publicationDate 1985-08-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4536252-A
titleOfInvention Laser-induced production of nitrosyl fluoride for etching of semiconductor surfaces
abstract Nitrosyl fluoride is prepared by laser-induced method wherein the nitrosylluoride is produced in situ or in close proximity to where it is used to etch semiconductor surfaces. n A reaction mixture of a catalyst compound and a fluoro compound, wherein the catalyst compound is an oxide of nitrogen selected from the group of nitrogen oxide compounds consisting of NO, N 2 O, and NO 2 and wherein the fluoro compound is selected from the group of fluoro compounds consisting of NF 3 and N 2 F 4 , is irradiated with CO 2 laser radiation to produce FNO. FNO reacts with an exposed silicon material to produce SiF 4 and nitrogen oxide. Since the oxide is regenerated, it can be regarded as a catalyst which can be recovered and recycled. n A production scheme for producing nitrosyl fluoride for etching is disclosed wherein the nitrosyl fluoride is produced directly in the laser reaction chamber by passing a CO 2 laser beam through the reaction mixture. Alternately, the nitrosyl fluoride can also be produced in a side chamber and the gas flowed into an etching chamber.
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