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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S505-873
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-128
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22
filingDate 1984-04-26^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1986-03-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d5859163c5c29d1a7206a18b7e8f75f
publicationDate 1986-03-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4575741-A
titleOfInvention Cryogenic transistor with a superconducting base and a semiconductor-isolated collector
abstract This invention relates generally to cryogenic amplifying-switching devices and more specifically relates to a cryogenic transistor with a superconducting base and a collector isolated from the base by a semiconductor element. Still more specifically, the invention is directed to a three terminal, transistor-like device which incorporates three metal layers. The first and second of the three layers are separated by an insulating tunnel barrier and the second and third layers are separated by a semiconductor layer of a thickness sufficient to inhibit tunnelling. The semiconductor layer has a barrier height (low) which is sufficient to permit the passage of quasiparticles from the second layer while simultaneously inhibiting the passage of Cooper pairs. The second layer is a superconductor while the first and third layers may be superconductors or normal metals. The second and third layers are connected to the semiconductor layer by means of ohmic contacts.
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priorityDate 1984-04-26^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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