http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4631352-A

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filingDate 1985-12-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1986-12-23^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b315f5763227002b9cd0da74c7f3f21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9637d106e1460189d9f8c0e3d45717f4
publicationDate 1986-12-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4631352-A
titleOfInvention High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
abstract A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series, where the tunnel junction is comprised of p + and n + layers of high band-gap III-V or II-VI semiconductor materials that match the lattice structure of silicon, such as GaP (band-gap 2.24 eV) or ZnS (band-gap 3.6 eV), each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.
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