| abstract |
The invention provides a novel and improved photosensitive or photocurable composition useful as a photoresist material in the manufacturing process of semiconductor devices such as LSIs by the lithographic process involving etching, in particular, with low temperature plasma in a dry process. The photoresist layer formed of the inventive composition is highly resistant against damages even by direct contacting with a photomask used in the pattern-wise exposure of the photoresist to light owing to the improved pliability thereof and good adhesion to the substrate surface in addition to the stability against the attack by the plasma. The composition comprises (a) a phenolic polymer, e.g. a novolac resin or a polymer of a hydroxystyrene, (b) an aromatic azide compound and (c) a polymer of a vinyl alkyl ether, the amounts of the compounds (b) and (c) being limited relative to the amount of the component (a). Best results of the pattern reproduction can be obtained only when the developer liquid following the patternwise irradiation of the photoresist layer is a specific solvent mixture which is a mixture of isoamyl acetate and methyl isobutyl ketone, isopropyl alcohol and xylene, or isoamyl acetate and ethyleneglycol monomethyl ether acetate in a specified weight proportion. |