| abstract |
A silicon carbide layer(s) is provided on a silicon substrate. If necessary, a desired pattern of the silicon carbide layer(s) is allowed to remain, while the other portion(s) is embedded with SiO 2 . If necessary, the silicon carbide layer(s) may be constituted of a barrier layer and a device-forming layer. A layer capable of easily forming an insulating layer, such as a polycrystalline silicon layer, is provided on the silicon carbide layer to form first electrodes, followed by insulation of the surface, such as oxidation of the surfaces of the first electrodes and the silicon carbide layer. Second electrodes are further formed in self alignment by utilizing the insulating layer of the surface of the first electrodes. This process is useful in preparation of a silicon carbide device capable of operation at high temperatures. |