| abstract |
A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula: n n H.sub.3 GaNR.sub.3 n n Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result. |