http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4798782-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ccaad9321162435999b6d98a399ef8c |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-105 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10 |
filingDate | 1987-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1989-01-17^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_467c902069fae28146d670f441ae38bb |
publicationDate | 1989-01-17^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-4798782-A |
titleOfInvention | Poly(acetylene) films having localized zones of a low conductivity material |
abstract | This invention relates to poly(acetylene) films having localized zones of a material other than poly(acetylene) with modified optical and electrical properties. The films are formed by selectively irradiating discrete areas of a film of a precursor polymer followed by heating of the irradiated precursor polymer to transform the non-irradiated areas into poly(acetylene). The resultant product has localized zones of modified electrical and optical properties which are useful in the semiconductor industries and in optical devices. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4857426-A |
priorityDate | 1986-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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