patent/US-4960719-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4960719-A

Outgoing Links

Predicate	Object
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classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-68
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
filingDate	1989-01-23^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	1990-10-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_770838f15ede2ac0941a5bfe83c99ed6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e49422d185a26bacb930715a896a668
publicationDate	1990-10-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-4960719-A
titleOfInvention	Method for producing amorphous silicon thin film transistor array substrate
abstract	A method for producing an amorphous silicon thin film transistor array substrate comprising successively coating a gate insulating layer, an amorphous silicon layer and a protective insulating layer on a glass substrate provided with a gate electrode and a gate wiring having a predetermined shape, in such a manner as to not cover the connecting terminal region of the gate wiring. A protective insulating layer is patterned into a predetermined shape. After passing through a predetermined production process to produce an amorphous silicon thin film transistor array, at least a gate wiring and a source wiring are provided. The step of paterning the protective insulating layer comprises covering the connecting terminals of the gate wiring and the exposed region of the glass substrate with a photoresist.
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