| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb8efa277b88a39948a0bfb308eca4e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337 |
| filingDate |
1990-10-05^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1992-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d76fa5a3fac387f675f4d2371861eb06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a43c727eab6f62c81f9cdd827a45a1e |
| publicationDate |
1992-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5126805-A |
| titleOfInvention |
Junction field effect transistor with SiGe contact regions |
| abstract |
A junction field effect transistor, specifically a static induction transistor. Prior to metallization a thin layer of germanium is placed over the exposed silicon of the source and gate regions. The germanium is intermixed with the underlying silicon to form a germanium-silicon composite. A rapid thermal anneal is performed to recrystallize the germanium-silicon composite. Alternatively, a single crystal epitaxial layer may be deposited on the silicon. Conventional metallization procedures are employed to produce ohmic source and gate contact members to the germanium-silicon composite or the epitaxial germanium of the source and gate regions. By virtue of the reduced bandgap provided by the presence of the germanium, the contact resistance of the device is reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5907168-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0852394-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5563448-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6933589-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005079660-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2309337-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2309337-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6075291-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003057555-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9166067-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6806572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6130144-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8736355-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5336903-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0852394-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6184098-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6169306-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004159948-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6879044-B2 |
| priorityDate |
1989-11-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |