| abstract |
An etching method comprises the steps of setting a substrate to be processed above the surface of a first electrode opposed to a second electrode within a vacuum container, with a clearance formed between the surface of the first electrode and the substrate, supplying a cooling gas to the electrodes with a predetermined flow rate and a pressure, supplying a process gas into the vacuum container, changing the process gas to a plasma, by applying a predetermined electric power across the electrodes, and etching the substrate by means of the plasma of the process gas. |