| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
1991-11-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1993-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d731a7e34a8ac0d021253a59c901f5e8 |
| publicationDate |
1993-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5231296-A |
| titleOfInvention |
Thin film transistor structure with insulating mask |
| abstract |
A thin film transistor and method for forming the same are disclosed. The transistor comprises a gate conductor (14) and a gate insulator (16). A semiconductor channel layer (18) is formed adjacent the gate insulator (16). A mask block (22) is formed covering a channel region (30) in the channel layer (18). A source region (26) and a drain region (28) are formed in the channel layer (18) adjacent opposite ends of the mask block (22). Conductive bodies (32) and (34) are formed in contact with source region (26) and drain region (28), respectively. Electric contacts (42) and (44) are then formed in contact with conductive bodies (32) and (34), respectively. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6037611-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6737711-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6300213-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4435461-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6316295-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6498375-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6083831-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6235562-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5629218-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6043507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6251714-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6312984-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6376287-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5591989-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6150201-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5512375-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5811323-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4435461-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6331725-B1 |
| priorityDate |
1989-12-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |