| abstract |
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of≦ about 20 nm and a defect density of≦ about 0.6 defects/cm 2 determined by BV measurements. n Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implantation into the substrate through the layer with a dose of≧ about 10 15 ions/cm 2 and a subsequent anneal at a temperature of≧ about 500° C. for a predetermined time. |