| abstract |
A resist pattern on a substrate is formed using an imageable resist layer on the surface of a substrate. The imageable resist layer comprises a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent. The imageable layer is prepared by reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst. In a preferred embodiment, the poly(styrene)-diene block copolymers are hydrosilylated by hydrosiloxanes using a platinum-divinyl tetramethyl disiloxane catalyst. |