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filingDate 1991-02-06^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1994-06-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5320983-A
titleOfInvention Spin-on glass processing technique for the fabrication of semiconductor devices
abstract PCT No. PCT/CA91/00041 Sec. 371 Date Sep. 30, 1992 Sec. 102(e) Date Sep. 30, 1992 PCT Filed Feb. 6, 1991 PCT Pub. No. WO91/12630 PCT Pub. Date Aug. 22, 1991.A method of applying a spin-on glass layer to a substrate is disclosed characterized in that the spin-on glass is applied as a plurality of contiguous thin layers that together form a composite layer. Each thin layer is cured prior to the application of the next layer at a temperature of at least about 300 DEG C., preferably 350 DEG C., for a time sufficient to permit catalyst connection and substantially eliminate volatile residual solvents contained therein. In this way cracking in organic SOGs can be substantially eliminated, and beneficial results can also be achieved with quasi-organic SOGs.
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