http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5323360-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-41
filingDate 1993-05-03^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1994-06-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0bb895f7ea11cc5efc0130b566c3985
publicationDate 1994-06-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5323360-A
titleOfInvention Localized ATD summation for a memory
abstract A memory (110) having sections of memory cells used ATD to generate the required timing signals, includes ATD generators (189), first summation circuits (180-183), and local summation circuits 185-187. An ATD pulse is generated by the ATD generators (189) when an address signal transitions from one logic state to another. The outputs of the ATD generators (189) are wired-OR connected to input terminals of first summation circuits (180-183). A first summation signal is provided by the first summation circuits (180-183) to each of the local summation circuits (185-187). The local summation circuits (185-187) are positioned in the vicinity of the areas where the timing signals are used. Localized generation of the ATD signals prevents the timing signals for being excessively skewed from each other in different portions of the memory (110).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6321316-B1
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priorityDate 1993-05-03^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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