| abstract |
An electron beam device includes a diamond layer positioned downstream from and in the path of an electron beam. This diamond layer has a conductance that is responsive to the electron beam. Two electrical contacts on the diamond layer provide connections to a power source and a load. When the electron beam is on, the diamond layer becomes conductive allowing electrical power to flow from the power source through the diamond layer to the load. Accordingly, the electron beam device can act as a switch, or the electron beam can be modulated to provide an amplifier. The diamond layer is capable of high temperature operation, resists crystal damage, resists corrosion, and provides a high breakdown voltage. At least one of the electrical contacts on the diamond layer preferably comprises a degeneratively doped diamond surface portion. The degeneratively doped diamond surface portion is relatively transparent to the electron beam, has a coefficient of thermal expansion that is matched with the diamond layer, and resists damage caused by the electron beam. |