http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5738820-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-597 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-5935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-0072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-593 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-599 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-597 |
| filingDate | 1996-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-04-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86ba119c9042de12b954463f44aeecb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d389b8f3cbe8b9c96cd67a543d2951d |
| publicationDate | 1998-04-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-5738820-A |
| titleOfInvention | Sintered silicon nitride-based body and process for producing the same |
| abstract | A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a beta -Si3N4 phase and/or a beta '-sialon phase, and a quantitative ratio of the grain phase of the beta -Si3N4 phase and/or the beta '-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re2Si2O7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO2, Re3Al5O12, ReAlO3, and Si3N4.Y2O3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of beta -Si3N4 phase and/or the beta '-sialon phase ranges from 0.03 to 1.6. The sintered body is produced by mixing a specific sintering aid and silicon nitride-based powder, sintering the mixture and heat treating the sintered body for nucleation and crystal growth within the temperature range of from 1050 DEG to 1550 DEG C. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006003885-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6170734-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009062105-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004204306-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8187525-B2 |
| priorityDate | 1995-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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