http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5879960-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_216a7faed04ec9497c9819cc03c04599 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 |
| filingDate | 1997-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-03-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe94a36e26e5da8432c038b8bc2990ef |
| publicationDate | 1999-03-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-5879960-A |
| titleOfInvention | Manufacturing method of thin film diode for liquid crystal display device |
| abstract | A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a liquid crystal of a liquid crystal display device. To form such a thin film diode, a lower layer film (2) is formed on the glass substrate (1) such that the lower layer film (2) overlaps with the upper layer film (4) and the lower layer film (2) has a plurality of differences in level. An insulating film (3) is formed by oxidizing the surface of the lower layer film (2) with an anodic oxidation technique. The upper layer film (4) is formed, thereby completing the thin film diode. Alternately, an insulating film material (7, 7') may be formed either on the lower layer film (2) or on the peripheral region thereof in the form of a film, and the insulating film (3) may be formed by oxidizing the insulating film material (7, 7'). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007040957-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008311724-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6436743-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1312514-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7432528-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6271050-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7550307-B2 |
| priorityDate | 1994-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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