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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F26B3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
filingDate 1997-10-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-01-25^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb09973871d73f33610ff30abed1947
publicationDate 2000-01-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6016612-A
titleOfInvention Process and device for drying of substrates
abstract To dry semiconductor substrates, especially silicon wafers subsequent to rinsing after etching, the substrate is exposed to the action of radiation which contains an IR portion and a UV portion, the IR portion being greater than the UV portion. The IR-UV radiation quickly dries the substrate and prevents contamination of the substrate with undesirable particles or limits it to a nondisruptive degree. To execute drying with IR-UV radiation, an arrangement is proposed in which the substrate is moved through directly from the treatment liquid (rinsing medium) between two rod-shaped radiators which emit IR-UV radiation.
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