| abstract |
A CMP slurry comprising ZrO2particles and a surfactant, comprising TMAH (Tetra-Methyl-Ammonium Hydroxide) or TBAH (Tetra-Butyl-Ammonium Hydroxide) in a water solution is suitable for polishing low dielectric constant k siloxane based SOG layers at a high polish removal rate and with high selectivity over deposited silicon oxide layers. Polish removal rates of up to 4000 Angstroms/min. are achieved at a selectivity ratio as high as 8. |