| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ef01e33058cf740cf2197991be97af1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
1998-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-01-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d72877e2fb529bd3ef2aa6d3ec301d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1972fda93ce03fb8580a2295a4d249b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38cea47eac338b2cd95d919bc95eeff9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f3bc9b31cd18de24388e461c24aac7a |
| publicationDate |
2001-01-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6171878-B1 |
| titleOfInvention |
Method of fabricating semiconductor laser using selective growth |
| abstract |
In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. n In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6717186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8451874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005105845-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011150010-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7203215-B2 |
| priorityDate |
1997-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |