http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6211093-B1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-948
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1998-12-22^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-04-03^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43b704511d533b1c4bae9b6b289f4bec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026
publicationDate 2001-04-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6211093-B1
titleOfInvention Laser ablative removal of photoresist
abstract In one aspect, the invention provides a method of exposing a material from which photoresist cannot be substantially selectively removed utilizing photoresist. In still another aspect of the invention, laser ablation of photoresist is utilized. In one implementation, the invention comprises forming a first material over a substrate. Photoresist is deposited over the first material and an opening is formed within the photoresist over the first material. Etching is then conducted into the first material through the photoresist opening. After the etching, the photoresist is laser ablated from over the first material.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7074708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737023-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6753899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6784119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005186801-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7419902-B2
priorityDate 1997-02-12^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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