| abstract |
A method of providing a semiconductor device with a selectively deposited inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is saturated in a phosphoric acid solution to form a phosphate layer on the exposed surfaces of the semiconductor but not on the metal end terminations. The device is thereafter plated by a conventional plating process and the plating is provided only on the end terminations. |