patent/US-6236099-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6236099-B1

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filingDate	1997-03-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2001-05-22^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09297d66bc00c4e07e9e0793b2ed66f2
publicationDate	2001-05-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6236099-B1
titleOfInvention	Trench MOS device and process for radhard device
abstract	A MOSgated device is resistant to both high radiation and SEE environments. The active area of the device is formed of trench devices having a thin gate dielectric on the trench walls and a thicker dielectric on the trench bottoms over the device depletion region. Termination rings formed of ring-shaped trenches containing floating polysilicon plugs surrounds and terminates the device active area.
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