patent/US-6271054-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6271054-B1

Outgoing Links

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assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14887 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14812
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148
filingDate	2000-06-02^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2001-08-07^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a988685550630b120b83f0dd121002ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd87a5215d903d32972398bd94aae1a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c30548372ec109ce2955cf09227984e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe3ae3108b2465171a025a1dfcd76fb1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa97fa387a3e476e8ad109159c333269
publicationDate	2001-08-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6271054-B1
titleOfInvention	Method for reducing dark current effects in a charge couple device
abstract	The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.
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priorityDate	2000-06-02^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

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