http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6284653-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2000-10-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dbcd1800923844adcd4e5dd926dfacf |
| publicationDate | 2001-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6284653-B1 |
| titleOfInvention | Method of selectively forming a barrier layer from a directionally deposited metal layer |
| abstract | A process for forming a composite structure, comprised of an overlying titanium nitride barrier layer, and an underlying titanium disilicide layer, located on a portion of a conductive region in a semiconductor substrate exposed at the bottom of a high aspect ratio contact hole, has been developed. A first iteration of this invention entails the deposition of a titanium ion layer, via an anisotropic, ion metal plasma (IMP), procedure, on the exposed portion of the conductive region, as well as on the top surface of the insulator layer in which the high aspect ratio contact hole was formed in. A first anneal cycle results in the formation of a titanium disilicide layer on the conductive region, leaving an unreacted titanium ion layer on the surface of the insulator layer. After removal of unreacted titanium, a second anneal cycle is performed in a nitrogen containing ambient, converting a top portion of the titanium disilicide layer to a titanium nitride barrier layer. A tungsten plug structure is then formed on titanium nitride-titanium disilicide layer, in the high aspect ratio contact hole. A second iteration of this invention features IMP deposition of the titanium ion layer on the exposed conductive region, at the bottom of the contact hole, as well as on the top surface of the photoresist shape used for definition of the high aspect ratio contact hole. After removal of the photoresist shape, and of the titanium ion layer located on the top surface of the photoresist shape, subsequent anneal cycles are performed resulting in the desired composite, titanium nitride-titanium disilicide structure, on the conductive region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005250321-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7906274-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03034481-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009067149-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6727165-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008095878-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010266965-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8850980-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101217118-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709376-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863189-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009026626-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004319-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007247608-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009130598-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008164573-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009212012-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7985530-B2 |
| priorityDate | 2000-10-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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