| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
1999-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d5719140e365b7e3de67a15dac1532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2783e49d2cdc0691fc0f52fcc953bda9 |
| publicationDate |
2001-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6300655-B1 |
| titleOfInvention |
Semiconductor memory of good retention and its manufacture |
| abstract |
A plurality of memory cell transistors are formed on a principal surface of a semiconductor substrate in a plurality of active regions defined by an isolation region. Each memory cell transistor uses one word line as its gate electrode and has a pair of source and drain regions defined by the gate electrode and the isolation region. One of a pair of source and drain regions is connected to one of a plurality of bit lines, and the other region is connected to one of a plurality of capacitors. Three sides of the other region are defined by the isolation region. The other region includes a first impurity doped region extending to under another word line adjacent to the one word line and a second impurity doped region partially overlapping the first impurity doped region and the gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100454548-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100343996-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7872290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003230779-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6638817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7211482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003205740-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6434732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004195608-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011031539-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005218458-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091072-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005064640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6949783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6852587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6656800-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004009141-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091540-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004209431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004058489-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006095944-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569860-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7087960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6525397-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6569750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007069265-A1 |
| priorityDate |
1998-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |