http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6331811-B2

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filingDate 1999-06-07^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-12-18^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f48057d0996ec15a923fc9be7857e5c1
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publicationDate 2001-12-18^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6331811-B2
titleOfInvention Thin-film resistor, wiring substrate, and method for manufacturing the same
abstract A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11230499-B2
priorityDate 1998-06-12^^<http://www.w3.org/2001/XMLSchema#date>
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