| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2000-03-09^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-03-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efc36e22b8b4c1dbefa2edb1e3a0741c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9304de96b9e4c153e10fc889ece22e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93ad59c0a06de121cf518ea8ceafc8b9 |
| publicationDate |
2002-03-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6352931-B1 |
| titleOfInvention |
Manufacturing method of semiconductor devices by using dry etching technology |
| abstract |
There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having a dual-damascene structure to control the shape and depth and prevent borderless etching which must be solved when a trench is formed. Polysilane and an insulating film are formed into a laminated structure so as to be integrated with each other after a dry etching step has been completed to easily form a contact hole having a high aspect ratio. The surface of polysilane is selectively formed into an insulating film so as to be used as a mask for use in a dry etching step. Polysilane for use as an anti-reflective film or an etching mask is changed to an oxide film or a nitride film so that films are easily removed. Hence it follows that a device region and a device isolation region of a densely integrated circuit can be smoothed, a self-aligned contact hole and metallization trench can be formed with a satisfactory manufacturing yield and the pattern of a gate electrode can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6964926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8992806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642246-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005245717-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7169697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9556513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6878637-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9069133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005082674-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9540519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005173803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9365922-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8344088-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02099864-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7189651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6875697-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2391388-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2391388-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7678462-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003119329-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002102843-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005058929-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006255315-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005020088-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6605542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003224611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340869-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8557877-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10544329-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004266098-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02078082-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8864898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1426424-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006017162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004110379-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8784985-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007151951-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8771834-B2 |
| priorityDate |
1999-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |