| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-14 |
| filingDate |
2000-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad97c717895fef614a3ef2cffd2ee7f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0393f24d9bf69a86820ba79a78ab38c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c93065bbd14b1c424607f75799ebf80 |
| publicationDate |
2002-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6417062-B1 |
| titleOfInvention |
Method of forming ruthenium oxide films |
| abstract |
A method of forming a ruthenium dioxide film for such purposes as the fabrication of stable thin-film resistors for microcircuits. The method generally entails forming an inorganic ruthenium-based film on a substrate, and then thermally decomposing at least a portion of the ruthenium-based film by exposure to a high-intensity beam of radiation, preferably visible light, to yield a ruthenium dioxide film on the substrate. Particular ruthenium-based precursors useful for forming the ruthenium-based film include ruthenium (III) chloride (RuCl3.nH2O) and ruthenium (III) nitrosyl nitrate. The method does not require a thermal treatment that heats the bulk of the substrate on which the ruthenium dioxide film is formed, and is therefore suitable for non-ceramic substrate materials, e.g., polymers such as those used as printed circuit boards (PCBs) and flexible circuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009000676-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007166995-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003068509-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010215869-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008226540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007018845-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007018845-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019179225-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013280859-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7405153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7740827-B2 |
| priorityDate |
2000-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |